gallium-arsenide field-effect transistor

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• gallium-arsenide field-effect transistor — galio arsenido lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. gallium arsenide field effect transistor vok. Galiumarsenid Feldeffekttransistor, m rus. полевой транзистор на арсениде галлия, m pranc. transistor à effet… …   Radioelektronikos terminų žodynas

• Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

• Gallium arsenide — Gallium arsenide …   Wikipedia

• transistor à effet de champ en arséniure de gallium — galio arsenido lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. gallium arsenide field effect transistor vok. Galiumarsenid Feldeffekttransistor, m rus. полевой транзистор на арсениде галлия, m pranc. transistor à effet… …   Radioelektronikos terminų žodynas

• Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

• transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… …   Universalium

• Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… …   Wikipedia

• Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

• History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… …   Wikipedia

• Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… …   Wikipedia

• Pockels effect — The Pockels effect, or Pockels electro optic effect, produces birefringence in an optical medium induced by a constant or varying electric field. It is distinguished from the Kerr effect by the fact that the birefringence is proportional to the… …   Wikipedia